| PART |
Description |
Maker |
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| MSE20N06N |
Low RDS(on) trench technology
|
Bruckewell Technology L...
|
| AM3446N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| AM2343P |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| AM2318N |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| IKW50N60T Q67040S4718 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| Q67040-S4521 IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
|
INFINEON[Infineon Technologies AG]
|
